On June 28-29, the 8th Jiwei Semiconductor Conference 2024 with the theme of "Crossing Boundaries and Creating a New Quality Future" was grandly held at the Xiamen International Convention Center Hotel. At the main forum of the Jiwei Semiconductor Conference on the morning of the 29th, the award ceremony of the 6th "Chip Power" Project Selection Competition in 2024 was held.

The 6th "Core Power" Project Selection Competition has attracted the attention of many domestic innovative projects and investment institutions since its recruitment began in June 2023. This year's Core Power Competition held a total of 20 preliminary rounds, including 14 online roadshows, and went to Shenzhen, Jiangyin, Suzhou, Quanzhou, Haimen, and Hefei to hold offline roadshows. More than 140 projects participated in the preliminary round, with over 100 top investment institutions participating in the preliminary selection. In the end, 13 projects emerged victorious and entered the finals.

As one of the top performers in this year's "Chip Power" competition, Shanghai PowerTop Semiconductor Co., Ltd. (hereinafter referred to as "PowerTop Semiconductor") stood out with its hardcore technology and cutting-edge high-end products, and was unanimously recognized by the top domestic investor team, winning the 2024 "Chip Power" Most Valuable Investment Award!

It is worth mentioning that the "Jiwei Semiconductor Exhibition" will be held concurrently with this conference, aiming to provide a platform for showcasing the development achievements, innovative products, and technologies of the integrated circuit (IC) industry. PowerTop Semiconductor showcased its high-end IGBT chips of 650/750/1000/1200/1700V and 15-300A series at the "Jiwei Semiconductor Exhibition", attracting many exhibitors to stop by.

PowerTop Semiconductor was founded in 2023, focusing on developing high-end IGBT chips. Its IGBT product line covers multiple series such as 650/750/1000/1200/1700V, with a focus on markets such as photovoltaic energy storage, new energy vehicles, and industrial control.

According to Omdia statistics, the global power semiconductor market will reach 48.1 billion US dollars in 2022 and is expected to grow to 52.2 billion US dollars by 2024, with a compound annual growth rate of about 5.46%, indicating stable growth. As the world's largest consumer of power semiconductors, China contributes about 40% of the power semiconductor market. It is expected that the size of China's power semiconductor market will reach over 20 billion US dollars (approximately 145 billion yuan) by 2024. But as of the end of 2023, the domestic localization rate of power semiconductors is less than 35%, especially the low localization rate of IGBT, and there is huge space for local substitution.

PowerTop Semiconductor conducts in-depth research on IGBT, SGT MOSFET and other products, striving to achieve domestic substitution. At present, PowerTop Semiconductor has efficiently developed and launched over 20 IGBT chips, delivering millions of chips to customers, and is about to enter the next stage of large-scale production.

The successful launch of innovative products cannot be separated from a team with strong technical strength. It is understood that the core team of PowerTop Semiconductor comes from Huahong, Advanced (Jita) Diodes、 Sanan Integration, Tongfu Microsemi、 Yangjie and other leading companies in the industry have an average of about 20 years of experience in the design, process research and development, and market sales of various power devices. The technical leader is one of the earliest core R&D personnel engaged in and deeply cultivating IGBT process platforms and device development in the leading FAB factories in China. They have fully experienced the development and large-scale production of the IGBT7 process platform from the first generation IGBT to the cutting-edge 7th generation microgroove field.

PowerTop Semiconductor is one of the few chip design companies in China that has a deep understanding of the entire process flow and key process menus of the seventh generation high current IGBT. They have fully applied these skills in IGBT device structure design and layout design optimization, significantly shortening the chip development iteration cycle and achieving product differentiation competitiveness recognized by top customers. It is worth noting that the IGBT7 product used for the 750V new energy vehicle drive inverter by PowerTop Semiconductor has passed bench testing and has been tested on the road.

In addition to focusing on high-end IGBT products, PowerTop Semiconductor is also deeply involved in the entire IGBT industry chain, with layouts in production, application, packaging, testing, and other aspects. The IGBT produced in wafer foundries adopts differentiated independent process flow and menu, achieving differentiated competitiveness of chips; Jointly develop the next generation microgroove IGBT process platform with emerging wafer foundries, and proactively layout the next generation IGBT chip products; Jointly define the IGBT7 application and packaging testing plan with the head module factory and electronic control factory, and optimize the chip design from the beginning of project approval. Thus optimizing resource allocation, improving operational efficiency, reducing intermediate links, lowering costs, and enhancing risk resistance capabilities.

Regarding the company's future product planning, Cai Binjun, General Manager of PowerTop Semiconductor, told Jiwei Network: "Based on the deep power device full process capability of the core team, PowerTop Semiconductor will continue to tailor IGBT series products with differentiated competitiveness for top customers. The company is collaborating with top 12 inch wafer foundries in the industry to jointly develop the next-generation microgroove IGBT 8 process platform, continuously driving the company's IGBT products to iterate and upgrade towards higher current density, lower switching losses, and stronger robustness.

In addition, the company is actively laying out third-generation semiconductor power devices represented by GaN and SiC, and is expected to achieve a combined supply of silicon-based and wide bandgap power devices next year.

(Proofreading/Sun Le)